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The BLT80,115 is an NPN bipolar RF power transistor designed for ultra-high frequency applications. It features a maximum collector-emitter voltage of 10V and a continuous collector current rating of 250mA. The device operates effectively up to a frequency of 900MHz with a power dissipation capacity of 2W. Packaged in the SC-73 (SOT-223) surface-mount format, it utilizes a four-terminal configuration suitable for compact circuit designs.
Verify the specific ordering suffix matches the required tape-and-reel or cut-tape packaging configuration. Confirm the manufacturer part number aligns exactly with NXP documentation to ensure correct pinout and electrical characteristics. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Select this component when designing circuits requiring high-efficiency amplification at ultra-high frequencies within low-voltage constraints. The SOT-223 package facilitates efficient heat transfer compared to smaller packages. Ensure the application environment supports the specified 10V maximum rating and that thermal management strategies accommodate the 2W dissipation limit.
This device belongs to NXP's portfolio of bipolar RF transistors engineered for robust performance in demanding radio frequency environments. The BLT series typically targets applications where linearity and power output are critical. The specific model integrates standard semiconductor manufacturing processes to deliver reliable switching and amplification capabilities across various consumer and industrial electronics platforms.
Consult official NXP substitution guides for direct equivalents. Verify that any alternative component matches the 10V rating, 900MHz frequency range, and SC-73 footprint. Ensure pin compatibility and thermal resistance specifications align with the existing design constraints before implementing any cross-brand replacements.