BLT80,115

BLT80,115

  • Description:RF TRANS NPN 10V 900MHZ SC-73
  • Series:-

SKU:6b2a5b3b8e50 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 900MHZ SC-73
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:900MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 150mA, 5V
  • Current - Collector (Ic) (Max):250mA
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SC-73
  • Grade:-
  • Qualification:-

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BLT80,115

Overview

The BLT80,115 is an NPN bipolar RF power transistor designed for ultra-high frequency applications. It features a maximum collector-emitter voltage of 10V and a continuous collector current rating of 250mA. The device operates effectively up to a frequency of 900MHz with a power dissipation capacity of 2W. Packaged in the SC-73 (SOT-223) surface-mount format, it utilizes a four-terminal configuration suitable for compact circuit designs.

Feature Summary

  • NPN polarity construction optimized for UHF power amplification
  • Surface-mount SC-73 package for automated assembly integration
  • High-frequency operation capability extending to 900MHz
  • Robust thermal performance supporting 2W power dissipation

Applications

  • UHF power amplifier stages
  • RF signal generation circuits
  • Wireless communication transmitters
  • Broadband amplification modules

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel or cut-tape packaging configuration. Confirm the manufacturer part number aligns exactly with NXP documentation to ensure correct pinout and electrical characteristics. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high-efficiency amplification at ultra-high frequencies within low-voltage constraints. The SOT-223 package facilitates efficient heat transfer compared to smaller packages. Ensure the application environment supports the specified 10V maximum rating and that thermal management strategies accommodate the 2W dissipation limit.

Part Context

This device belongs to NXP's portfolio of bipolar RF transistors engineered for robust performance in demanding radio frequency environments. The BLT series typically targets applications where linearity and power output are critical. The specific model integrates standard semiconductor manufacturing processes to deliver reliable switching and amplification capabilities across various consumer and industrial electronics platforms.

Replacement Considerations

Consult official NXP substitution guides for direct equivalents. Verify that any alternative component matches the 10V rating, 900MHz frequency range, and SC-73 footprint. Ensure pin compatibility and thermal resistance specifications align with the existing design constraints before implementing any cross-brand replacements.

BLT80,115BLT80,115

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