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The BLW96/01,112 is an NPN silicon planar epitaxial power transistor manufactured by Ampleon USA Inc. Designed for high-frequency and very-high-frequency bands, it serves as a robust component for industrial and military transmitting equipment. The device operates in Class A, AB, and B configurations, offering excellent linear amplifier performance suitable for single-sideband applications. It features resistance stabilization to withstand severe load mismatch conditions and is supplied in matched hFE groups within a 1/2-inch flange envelope with a ceramic cap.
Verify the manufacturer designation carefully, as the BLW96 part number has been produced by multiple vendors including NXP Semiconductors and New Jersey Semi-Conductors. Confirm that the specific suffix ,112 corresponds to the Ampleon USA Inc. variant. Ensure the datasheet matches the required electrical characteristics for your specific frequency band and power application before finalizing procurement.
Select this component when designing systems requiring high-power amplification in the HF and VHF ranges. The resistance-stabilized nature makes it suitable for environments prone to antenna mismatches. Consider the physical dimensions of the 1/2-inch flange envelope during mechanical design. Verify thermal management requirements based on the intended Class A, AB, or B operation mode.
This transistor belongs to the BLW series of high-power RF transistors. Similar devices include the BLW76, BLW83, and BLW86, which share comparable HF/VHF power transistor functionalities. These components are typically used in high-power transmitter stages where linearity and reliability under mismatched load conditions are critical operational requirements.
Potential substitutes include the BLW76, BLW83, and BLW86 from NXP Semiconductors. Cross-referencing with versions from New Jersey Semi-Conductors is also possible. Verify pinout compatibility and thermal interface specifications before substitution.