BLW96/01,112

BLW96/01,112

  • Description:RF TRANS NPN 55V 235MHZ CRFM4
  • Series:-

SKU:6808808295f6 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 55V 235MHZ CRFM4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):55V
  • Frequency - Transition:235MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:340W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 7A, 5V
  • Current - Collector (Ic) (Max):12A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-121B
  • Supplier Device Package:CRFM4
  • Grade:-
  • Qualification:-

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BLW96/01,112

Overview

The BLW96/01,112 is an NPN silicon planar epitaxial power transistor manufactured by Ampleon USA Inc. Designed for high-frequency and very-high-frequency bands, it serves as a robust component for industrial and military transmitting equipment. The device operates in Class A, AB, and B configurations, offering excellent linear amplifier performance suitable for single-sideband applications. It features resistance stabilization to withstand severe load mismatch conditions and is supplied in matched hFE groups within a 1/2-inch flange envelope with a ceramic cap.

Feature Summary

  • High-power HF/VHF operation capability
  • Resistance stabilized design for load mismatch tolerance
  • Matched hFE group supply for consistency

Applications

  • Industrial transmitting equipment
  • Military transmitting equipment
  • Single-sideband linear amplifiers

Procurement Notes

Verify the manufacturer designation carefully, as the BLW96 part number has been produced by multiple vendors including NXP Semiconductors and New Jersey Semi-Conductors. Confirm that the specific suffix ,112 corresponds to the Ampleon USA Inc. variant. Ensure the datasheet matches the required electrical characteristics for your specific frequency band and power application before finalizing procurement.

Selection Notes

Select this component when designing systems requiring high-power amplification in the HF and VHF ranges. The resistance-stabilized nature makes it suitable for environments prone to antenna mismatches. Consider the physical dimensions of the 1/2-inch flange envelope during mechanical design. Verify thermal management requirements based on the intended Class A, AB, or B operation mode.

Part Context

This transistor belongs to the BLW series of high-power RF transistors. Similar devices include the BLW76, BLW83, and BLW86, which share comparable HF/VHF power transistor functionalities. These components are typically used in high-power transmitter stages where linearity and reliability under mismatched load conditions are critical operational requirements.

Replacement Considerations

Potential substitutes include the BLW76, BLW83, and BLW86 from NXP Semiconductors. Cross-referencing with versions from New Jersey Semi-Conductors is also possible. Verify pinout compatibility and thermal interface specifications before substitution.

BLW96/01,112BLW96/01,112

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