BSB019N03LX G

Single FETs, MOSFETs Overview

The BSB019N03LX G is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a drain-source voltage (VDS) of 30 V and a maximum on-resistance (RDS(on)) of 19 mΩ at 10 V gate drive. The device supports a continuous drain current of 32 A at 25°C case temperature and up to 174 A at case temperature. It is housed in a surface-mount MG-WDSON-2 package, also known as CanPAK M™, designed for efficient thermal management and high power density in compact electronic designs.

Single FETs, MOSFETs Feature Summary

• Optimized low on-resistance for reduced conduction losses
• Advanced OptiMOS technology for high switching efficiency
• Compact surface-mount packaging for space-constrained applications

Single FETs, MOSFETs Applications

• DC-DC converter modules
• Power distribution networks
• Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify the component status carefully, as some sources indicate this specific part number may be obsolete or end-of-life. Confirm availability through authorized distributors and check for valid RoHS compliance documentation. Ensure the ordering suffix matches the required package variant and ensure compatibility with your manufacturing process before placing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rating is sufficient and low RDS(on) is critical for efficiency. The MG-WDSON-2 package offers a balance between thermal performance and board space. Compare total system cost against alternative packages like D2PAK if higher current ratings are needed, considering the trade-off between footprint and thermal resistance.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS family, which integrates advanced trench gate technology to minimize gate charge and on-resistance. It is designed for general-purpose power switching applications where high efficiency and reliability are required. The CanPAK M™ package provides superior thermal dissipation compared to standard small-outline packages.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same 30 V, ~20 mΩ category. Verify that any substitute maintains similar thermal characteristics and gate charge specifications to ensure circuit stability without redesign.