BSB028N06NN3GXUMA2

$1.01

Description：TRENCH 40<-<100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:a77101d02a23 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB028N06NN3GXUMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH 40. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB028N06NN3GXUMA2

Description：TRENCH 40<-<100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 102µA
Gate Charge (Qg) (Max) @ Vgs：143 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12000 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 78W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-5-3
Package / Case：DirectFET™ Isometric MN

Single FETs, MOSFETs datasheet and documents for BSB028N06NN3GXUMA2

BSB028N06NN3GXUMA2

Single FETs, MOSFETs Overview

The BSB028N06NN3GXUMA2 is a single N-channel enhancement mode Power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an MG-WDSON-2 surface-mount package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 90 A. Its maximum on-state resistance is 2.8 mOhms at a gate-source voltage of 10 V. The component operates within a temperature range of -40 °C to +150 °C, with a power dissipation rating of 78 W.

Single FETs, MOSFETs Feature Summary

Single N-channel enhancement mode configuration for efficient switching control
Low on-state resistance to minimize conduction losses in high-current applications
High thermal performance capability suitable for compact surface-mount designs

Single FETs, MOSFETs Applications

DC-DC converter circuits requiring low profile packaging
Power management systems utilizing surface-mount assembly
General purpose switching applications compatible with 60 V ratings

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GXUMA2 to ensure correct reel packaging and tape specifications. Confirm that the MG-WDSON-2 footprint matches the target PCB layout dimensions. Check moisture sensitivity levels and recommended reflow soldering profiles prior to manufacturing integration. Ensure compatibility with standard surface-mount placement equipment.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution is required for 60 V switching applications. The MG-WDSON-2 package offers space efficiency compared to traditional through-hole options. Evaluate the 90 A current rating against peak load requirements. Consider the thermal dissipation characteristics relative to the available board copper area for adequate heat spreading.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon Power MOSFET portfolio designed for general-purpose switching. It represents a silicon-based solution optimized for modern electronics manufacturing. The device integrates robust construction for reliable operation in various power conversion topologies.