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BSB044N08NN3GXUMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 18A/90A 2WDSON. Review the specifications below when checking this part for your BOM.
BSB044N08NN3GXUMA2 is a single N-channel OptiMOS 3 power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and features an MG-WDSON-2 surface-mount package. The device supports a drain-source voltage of 80 V and delivers a continuous drain current of 90 A. Its maximum on-resistance is specified at 3.7 milliohms, with a gate-source threshold voltage typically around 2 V. The component operates within a temperature range from -40 °C to +150 °C and handles up to 78 W of power dissipation.
Verify the exact suffix GXUMA2 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with moisture sensitivity levels during storage and handling. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when an 80 V rating and 90 A current capacity are required in a small footprint. Compare the 3.7 milliohm on-resistance against thermal constraints in the target application. Confirm that the MG-WDSON-2 package dimensions fit the PCB layout requirements.
This part belongs to the OptiMOS 3 family designed for general-purpose power switching applications. It serves as a discrete replacement for integrated solutions where specific voltage and current parameters must be managed externally. The product line focuses on balancing conduction losses with switching speed for industrial environments.
The BSB044N08NN3 G is listed as a discontinued or alternative designation within the same series. Verify pinout and electrical equivalence if substituting.
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