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BSB056N10NN3GXUMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSB056N10NN3GXUMA2
- Description：TRENCH >=100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5500 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 78W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MG-WDSON-5-3
- Package / Case：DirectFET™ Isometric MN
Single FETs, MOSFETs datasheet and documents for BSB056N10NN3GXUMA2
Single FETs, MOSFETs Overview
The BSB056N10NN3GXUMA2 is an N-channel OptiMOS™ 3 Power-MOSFET manufactured by Infineon Technologies. It features a 100 V drain-source breakdown voltage and a maximum on-resistance of 5.6 mΩ at VGS=10 V. The device supports a continuous drain current of 83 A at TC=25 °C and handles pulsed currents up to 332 A. Key electrical parameters include a typical gate charge of 56 nC, input capacitance of 4100 pF, and output capacitance of 750 pF. It operates within a junction temperature range of -40 °C to +150 °C and utilizes the MG-WDSON-5 package.
Single FETs, MOSFETs Feature Summary
- Dual-sided cooling capability for enhanced thermal management
- Optimized for high switching frequency DC/DC converter applications
- Low profile design with excellent gate charge x RDS(on) figure of merit
Single FETs, MOSFETs Applications
- High switching frequency DC/DC converters
- Power stages requiring low parasitic inductance
- General purpose power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'GXUMA2' against official documentation to confirm tape and reel specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Ensure the ordering code matches the exact package variant required for your PCB footprint.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and low on-resistance are required for efficient power conversion. Consider the dual-sided cooling feature if thermal dissipation is critical. Evaluate the gate charge and capacitance values to ensure compatibility with your driver circuitry for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS™ 3 family, designed for medium voltage applications. It is housed in the MG-WDSON-5 package, which provides a compact form factor suitable for surface mount technology. The series emphasizes low on-resistance and fast switching capabilities.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same OptiMOS™ 3 family or other Infineon 100 V MOSFETs with similar RDS(on) and package dimensions. Verify pinout compatibility and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
