BSB104N08NP3GXUMA1

$0.50

Description：TRENCH 40<-<100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:2a2bbc2be364 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB104N08NP3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH 40. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB104N08NP3GXUMA1

Description：TRENCH 40<-<100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2100 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 42W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2-6
Package / Case：DirectFET™ Isometric MP

Single FETs, MOSFETs datasheet and documents for BSB104N08NP3GXUMA1

BSB104N08NP3GXUMA1

Single FETs, MOSFETs Overview

The BSB104N08NP3GXUMA1 is an N-channel power MOSFET from Infineon Technologies, engineered for high-efficiency power switching applications. It utilizes robust OptiMOS technology to deliver superior performance characteristics compared to previous generations. The device features a drain-source voltage rating of 80 V and supports continuous drain currents of 13 A at ambient temperature and 50 A at case temperature. Thermal management capabilities include a power dissipation rating of 2.8 W at ambient temperature and 42 W at case temperature. The component is housed in a surface-mount MG-WDSON-2-6 package.

Single FETs, MOSFETs Feature Summary

Advanced N-channel devices engineered for high-efficiency power switching
Delivers superior performance via robust power MOSFET technology
Surpasses the performance levels of OptiMOS 5 generation

Single FETs, MOSFETs Applications

High-efficiency power switching circuits
Power conversion systems requiring advanced MOSFET technology

Single FETs, MOSFETs Procurement Notes

Verify the specific part number BSB104N08NP3GXUMA1 against official Infineon documentation to confirm current production status and technical specifications. Ensure compatibility with the MG-WDSON-2-6 package requirements for your design. Cross-reference datasheet parameters such as thermal resistance and voltage ratings with your system constraints before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems that require high-efficiency switching with improved performance over older OptiMOS generations. Consider the 80 V drain-source voltage and the specific thermal dissipation limits of the MG-WDSON-2-6 package. Evaluate the trade-off between the 13 A ambient current rating and the 50 A case-rated capability based on your thermal management strategy.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family, specifically noted for outperforming OptiMOS 5. It represents a progression in silicon carbide or advanced silicon MOSFET technologies aimed at reducing conduction and switching losses in compact surface-mount form factors suitable for modern electronic equipment.