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BSB104N08NP3GXUMA3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH 40. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSB104N08NP3GXUMA3
- Description：TRENCH 40<-<100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2100 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 42W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MG-WDSON-2-6
- Package / Case：DirectFET™ Isometric MP
Single FETs, MOSFETs datasheet and documents for BSB104N08NP3GXUMA3
Single FETs, MOSFETs Overview
The BSB104N08NP3GXUMA3 is a single N-Channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features an 80V drain-source voltage rating and operates in enhancement mode. The device is housed in a compact MG-WDSON-2-6 surface-mount package. Key electrical parameters include a continuous drain current of 50A at case temperature and a maximum gate-source voltage of ±20V. It supports a junction temperature range from -40°C to +150°C with a power dissipation capacity of 42W at the case.
Single FETs, MOSFETs Feature Summary
- Optimized for DC/DC converter applications
- Low profile design under 0.7mm height
- Dual-sided cooling capability
Single FETs, MOSFETs Applications
- DC/DC converters
- Industrial systems
- Consumer electronics
- Digital systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix (e.g., UMA3) against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure ESD handling protocols are followed due to moisture sensitivity classification. Cross-reference the exact part number to avoid confusion with similar MG-WDSON variants.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low-profile surface-mount solutions with dual-sided thermal management. The OptiMOS technology provides an excellent figure of merit regarding gate charge and on-resistance. Ensure the application circuit can support the specified 80V breakdown voltage and that thermal constraints align with the 42W case dissipation rating.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family, designed for high-efficiency power switching. The MG-WDSON-2-6 package allows for efficient heat dissipation through both top and bottom surfaces. It is distinct from other BSB series parts by its specific voltage class and package footprint, targeting modern compact power supply designs.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the BSB104N08NP3G series. Verify pin compatibility and thermal characteristics when considering alternatives. Ensure any replacement maintains the same voltage and current ratings for safe operation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
