BSB165N15NZ3GXUMA2

$0.95

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:a9f6a754a10b Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSB165N15NZ3GXUMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB165N15NZ3GXUMA2

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 78W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2-9
Package / Case：DirectFET™ Isometric MZ

Single FETs, MOSFETs datasheet and documents for BSB165N15NZ3GXUMA2

BSB165N15NZ3GXUMA2

Single FETs, MOSFETs Overview

The BSB165N15NZ3 G is an n-Channel Power MOSFET from the OptiMOS™ 150V family, designed for high power density and energy efficiency. It features a maximum drain-source voltage (VDS) of 150 V and a continuous drain current (ID) of 45 A at TC=25 °C. The device exhibits a typical on-state resistance (RDS(on)) of 13.1 mΩ at VGS=10 V and ID=30 A. Key dynamic parameters include a total gate charge (Qg) of 26 nTypical and an output charge (Qoss) of 68 nTypical. It operates within a junction temperature range of -40 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for high switching frequency DC/DC converter applications
Features very low on-resistance and excellent gate charge x RDS(on) product
Compatible with DirectFET® package MZ footprint and outline
Supports double sided cooling with low parasitic inductance

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switches
Power management for high performance computing
High power density point of load converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required tape and reel packaging configuration. Ensure compliance with RoHS and halogen-free standards as specified in the datasheet. Check for any end-of-life notices or recommended replacement parts before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in solar, drives, datacom, and telecom sectors. Evaluate thermal constraints carefully, noting the thermal resistance values for both case and junction-to-ambient conditions. Consider the low profile package dimensions for space-constrained layouts. Verify that the gate drive voltage aligns with the optimal RDS(on) performance characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 150V series, which provides class-leading power MOSFETs for demanding voltage regulator solutions. The technology focuses on minimizing gate and output charges alongside low on-state resistance to enhance overall system efficiency and reduce electromagnetic interference in switching applications.