BSB165N15NZ3GXUMA3

$0.95

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:68db80c6c699 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB165N15NZ3GXUMA3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB165N15NZ3GXUMA3

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 78W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2-9
Package / Case：DirectFET™ Isometric MZ

Single FETs, MOSFETs datasheet and documents for BSB165N15NZ3GXUMA3

BSB165N15NZ3GXUMA3

Single FETs, MOSFETs Overview

The BSB165N15NZ3GXUMA3 is an n-channel power MOSFET from the OptiMOS™ 150V series, designed for high power density and energy efficiency. It features a maximum drain-source voltage of 150 V and a continuous drain current of 45 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 13.1 mΩ and a total gate charge of 26 nC. Packaged in the MG-WDSON-2 footprint with a low profile under 0.7 mm, it supports double-sided cooling and operates within a junction temperature range of -40 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for high switching frequency DC/DC converter applications
Features very low on-resistance and excellent gate charge x RDS(on) figure of merit
Compatible with DirectFET® package MZ footprint and outline

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switches
Power management for high performance computing
High power density point of load converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm the package type matches the MG-WDSON-2 outline dimensions. Ensure environmental compliance requirements align with RoHS and halogen-free standards as documented. Validate thermal characteristics against specific PCB copper area constraints for accurate junction temperature calculations.

Single FETs, MOSFETs Selection Notes

Select this component when designing for high power density solutions requiring low parasitic inductance and low profile packaging. Consider the thermal resistance values relative to the intended PCB copper area for effective heat dissipation. Evaluate the gate charge parameters against driver capabilities to optimize switching speed and minimize losses in synchronous rectification or primary side switch topologies.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ 150V family, which targets demanding voltage regulator solutions in solar, drives, datacom, and telecom sectors. The technology emphasizes ultra-low gate and output charges combined with minimal on-state resistance to enhance overall system efficiency and reduce design complexity for control and sync FETs.