BSC009NE2LS5IATMA1

Single FETs, MOSFETs Overview

The BSC009NE2LS5I is an OptiMOS™ 5 N-channel power MOSFET rated for a drain-source voltage of 25 V. It features a maximum on-resistance of 0.95 mΩ at VGS=10V and 1.05 mΩ at VGS=4.5V, supporting a continuous drain current of 217 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and is qualified according to JEDEC standards. Key dynamic parameters include a total gate charge of 17 nC (0-4.5V) and 36 nC (0-10V), with output charge Qoss of 27 nC. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Optimized specifically for high-performance buck converter applications
• Features a monolithically integrated Schottky-like diode
• Delivers very low on-resistance at logic-level gate voltages
• Subjected to 100% avalanche testing for reliability

Single FETs, MOSFETs Applications

• High-performance buck converters
• DC/DC conversion circuits
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code BSC009NE2LS5IATMA1 against the datasheet part number BSC009NE2LS5I to confirm package and marking consistency. Ensure the application environment respects the absolute maximum ratings, particularly regarding thermal resistance and case temperature limits. Confirm RoHS compliance and halogen-free status requirements match project specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing synchronous rectification stages requiring low RDS(on) at 4.5V drive levels. The integrated Schottky diode reduces external component count but requires checking reverse recovery characteristics. Evaluate thermal performance based on the specified PCB cooling area and ambient conditions, as current ratings are highly dependent on case temperature.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS™ 5 portfolio, designed for efficiency improvements in low-voltage power switching. It utilizes PG-TDSON-8 packaging to provide compact footprint solutions. The technology focuses on minimizing conduction losses while maintaining robust avalanche capability, targeting modern server and communication power supplies.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other OptiMOS™ 5 devices in the TDSON-8 package offering similar 25V ratings. Verify pinout compatibility and thermal resistance values when substituting. Ensure the replacement part meets the same JEDEC qualification standards if used in automotive or industrial environments.