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BSC010NE2LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 39A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC010NE2LSATMA1
- Description：MOSFET N-CH 25V 39A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：39A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4700 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC010NE2LSATMA1
Single FETs, MOSFETs Overview
The BSC010NE2LSATMA1 is an N-channel OptiMOS Power-MOSFET with a 25 V drain-source breakdown voltage. It features a maximum on-resistance of 1.0 mΩ at VGS=4.5 V and supports a continuous drain current of up to 242 A at TC=25°C. The device includes 100% avalanche testing, Pb-free lead plating, and RoHS compliance. It utilizes the PG-TDSON-8 package.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance Buck converter applications
- Features very low on-resistance at VGS=4.5 V
- Includes 100% avalanche testing for reliability
- Provides superior thermal resistance characteristics
Single FETs, MOSFETs Applications
- High-performance Buck converters
- Automotive power distribution systems
- General-purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code matches the required tape-and-reel packaging configuration. Confirm that the component meets all applicable JEDEC standards for target applications. Ensure compatibility with halogen-free requirements according to IEC61249-2-21. Validate that the PG-TDSON-8 footprint aligns with the design layout before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring low conduction losses at logic-level gate voltages. The device is suitable for applications demanding robust avalanche energy handling. Consider the thermal resistance values when determining heat dissipation requirements for the specific PCB layout and operating environment.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS Power-MOSFET family, specifically designed for 25 V applications. It is manufactured using advanced silicon technology to achieve high current density in a compact surface-mount package. The product line emphasizes efficiency and reliability for automotive and industrial power management solutions.
Single FETs, MOSFETs Replacement Considerations
Check datasheet specifications for compatible replacements within the same voltage and current ratings. Verify pinout compatibility and thermal performance metrics. Ensure any substitute component meets the same automotive qualification standards if used in critical applications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
