BSC010NE2LSIATMA1

$1.78

Description：MOSFET N-CH 25V 38A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dbb43e9811d2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC010NE2LSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 38A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC010NE2LSIATMA1

Description：MOSFET N-CH 25V 38A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.05mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 96W (Tc)
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-7
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC010NE2LSIATMA1

BSC010NE2LSIATMA1

Single FETs, MOSFETs Overview

The BSC010NE2LSIATMA1 is a monolithic N-channel OptiMOS Power-MOSFET with a 25 V drain-source breakdown voltage. It features a maximum on-resistance of 1.05 mΩ at VGS=4.5 V and supports a continuous drain current of 236 A at TC=25°C. The device utilizes a PG-TDSON-8 (SuperSO8) package, providing a thermal resistance from junction to case of 1.3 K/W. Total gate charge is specified at 59 nC for a 0V to 10V swing, and the component is qualified according to JEDEC standards.

Single FETs, MOSFETs Feature Summary

Optimized specifically for high-performance buck converter applications
Features a monolithic integrated Schottky-like diode structure
Guaranteed 100% avalanche tested for robustness under extreme conditions

Single FETs, MOSFETs Applications

High-performance synchronous buck converters
Automotive power distribution systems
General-purpose low-voltage DC-DC conversion

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'IATMA1' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the required operating temperature range aligns with the -55°C to +150°C limits defined in the datasheet. Cross-reference the JEDEC qualification status if the target application demands strict automotive or industrial reliability certifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring ultra-low conduction losses at 25 V logic levels. The optimized RDS(on) at VGS=4.5 V makes it suitable for direct drive by standard microcontrollers or dedicated gate drivers without level shifting. Evaluate the thermal management requirements based on the 1.3 K/W junction-to-case resistance for high-current scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS Power-MOSFET family, engineered for low-voltage switching efficiency. The SuperSO8 package provides a compact footprint while maintaining high current handling capabilities through multiple exposed drain pads. It represents a balance between switching speed and conduction loss for modern power electronics.