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BSC011N03LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 37A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC011N03LSATMA1
- Description：MOSFET N-CH 30V 37A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：37A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4700 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 96W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC011N03LSATMA1
Single FETs, MOSFETs Overview
The BSC011N03LS is a 30 V N-channel OptiMOS Power-MOSFET in PG-TDSON-8 package. It features a maximum drain-source on-resistance of 1.1 mΩ at VGS=4.5 V and continuous drain current up to 240 A at 25°C. The device supports an operating temperature range from -55°C to 175°C, with junction-to-case thermal resistance of 1.3 K/W. Total gate charge is 72 nC at VGS=10 V.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converter applications
- Fully qualified according to JEDEC standards for industrial applications
- Features superior thermal resistance characteristics
- Includes internal body diode
Single FETs, MOSFETs Applications
- High-performance buck converters
- Industrial power supply circuits
- DC-DC conversion modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and material content declarations prior to final procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses and high current handling within a compact surface-mount footprint. Ensure adequate PCB copper area for the drain connection to maintain specified thermal performance and current ratings.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS Power-MOSFET family, designed for efficient power switching. It utilizes advanced silicon technology to achieve low on-resistance while maintaining robust avalanche energy capabilities for reliable operation in demanding environments.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference guides or application notes for verified substitute part numbers. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics.
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