Single FETs, MOSFETs BSC011N03LSTATMA1 product image

BSC011N03LSTATMA1

$2.23
  • Description:MOSFET N-CH 30V 39A/100A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:42d652c5fd3b Category: Brand:

  
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BSC011N03LSTATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 39A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC011N03LSTATMA1

  • Description:MOSFET N-CH 30V 39A/100A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:39A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:48 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6300 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3W (Ta), 115W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8 FL
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC011N03LSTATMA1

BSC011N03LSTATMA1

Single FETs, MOSFETs Overview

The BSC011N03LSTATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 5 technology. It features a 30V drain-source voltage rating and a continuous drain current of 39A at case temperature (Ta) or 100A at case temperature (Tc). The device offers a maximum on-resistance of 1.1mΩ at 10V gate drive. Power dissipation capabilities are rated at 3W at ambient temperature and 115W at case temperature. It is housed in a surface-mount PG-TDSON-8 FL package.

Single FETs, MOSFETs Feature Summary

  • Engineered with advanced OptiMOS 5 technology for high-efficiency power switching applications.
  • Delivers superior performance characteristics compared to previous OptiMOS generations through robust power MOSFET design.

Single FETs, MOSFETs Applications

  • High-efficiency power switching circuits
  • DC-DC converter designs requiring low on-resistance
  • Power management systems utilizing surface-mount packaging

Single FETs, MOSFETs Procurement Notes

Verify the component status before procurement as sources indicate it may be scheduled for obsolescence. Confirm the specific datasheet version matches your design requirements. Ensure compatibility with the PG-TDSON-8 FL footprint during layout. Check for any end-of-life notices from the manufacturer to avoid supply chain disruptions in future production runs.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with low Rds(on) is required. The PG-TDSON-8 FL package suits space-constrained surface-mount designs. Consider the thermal ratings of 3W (Ta) and 115W (Tc) for heat dissipation planning. OptiMOS 5 technology provides efficiency benefits over older generations for modern power conversion needs.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family, specifically the OptiMOS 5 generation designed for improved efficiency. It is an N-channel silicon-based power transistor intended for general-purpose power switching. The device is manufactured using standard silicon technology and is available in leadless surface-mount packages for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the OptiMOS 5 series with similar voltage and current ratings. Verify pinout compatibility with the PG-TDSON-8 FL package if replacing with other manufacturers' components. Ensure thermal resistance values match the existing heatsinking or PCB copper area design constraints.

BSC011N03LSTATMA1BSC011N03LSTATMA1
$2.23
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