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BSC014N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 30A/100A TDSON. Review the specifications below when checking this part for your BOM.
The BSC014N03MSGATMA1 is an N-channel OptiMOS 3 M-Series Power-MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 100 A at Tc=25°C. The maximum on-resistance is 1.75 mΩ at Vgs=4.5 V and 1.4 mΩ at Vgs=10 V. Total gate charge is typically 63 nC at Vgs=10 V. The device operates within a temperature range of -55°C to +150°C.
Verify the complete part number suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance and halogen-free status requirements match project standards. Cross-reference the specific datasheet revision with the ordered component batch to validate electrical parameters and thermal ratings.
Select this component for designs requiring high efficiency under 5V logic level drive signals. Evaluate the low gate charge and optimized FOM for high-frequency switching applications. Ensure the PCB layout supports the required thermal dissipation given the TDSON-8 package dimensions and junction-to-case thermal resistance values.
This component belongs to the Infineon OptiMOS 3 M-Series family, designed specifically for low-voltage, high-current power switching applications. The series emphasizes low on-resistance and fast switching speeds suitable for modern portable electronics and compact power supply architectures.
BSC014N03MS G
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