BSC014N06NSSCATMA1

$3.49

Description：MOSFET N-CH 60V 261A WSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5688923da419 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC014N06NSSCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 261A WSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC014N06NSSCATMA1

Description：MOSFET N-CH 60V 261A WSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：261A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.3V @ 120µA
Gate Charge (Qg) (Max) @ Vgs：104 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8125 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 188W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-WSON-8-2
Package / Case：8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for BSC014N06NSSCATMA1

BSC014N06NSSCATMA1

Single FETs, MOSFETs Overview

The BSC014N06NSSCATMA1 is an N-channel OptiMOS™ power transistor with a 60 V drain-source breakdown voltage. It utilizes a PG-VSON-8 / PG-WSON-8 dual-side cooled package to achieve superior thermal performance, featuring a maximum junction-to-case bottom thermal resistance of 0.8 K/W and a top thermal resistance of 0.72 K/W. The device supports a continuous drain current of 261 A at 25°C case temperature and a pulsed drain current of 1044 A. Its maximum on-state resistance is 1.4 mΩ at 10 V gate drive. Total gate charge is typically 89 nC, and the component is rated for operating temperatures up to 175°C.

Single FETs, MOSFETs Feature Summary

Dual-side cooled PG-VSON-8 / PG-WSON-8 package providing lowest junction-to-top thermal resistance
Optimized for high-performance synchronous rectification in SMPS applications
100% avalanche tested for enhanced robustness
Enlarged source interconnection design for higher solder joint reliability

Single FETs, MOSFETs Applications

High-performance synchronous rectification
Switching mode power supplies (SMPS)
Industrial power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the procurement matches the PG-VSON-8 or PG-WSON-8 variant as defined in the datasheet. Cross-reference the JEDEC qualification status and material content declarations prior to finalizing supply agreements.

Single FETs, MOSFETs Selection Notes

Select this component when low thermal resistance and high current handling are required in a compact footprint. The dual-side cooling capability allows efficient heat dissipation through both the top and bottom surfaces. Verify that the application circuit can support the 60 V rating and that the PCB layout accommodates the enlarged source pads for optimal thermal and mechanical performance.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS™ Power Transistor family designed for 60 V applications. It represents a generation of MOSFETs optimized for efficiency and thermal management in modern power electronics. The SuperSO8 form factor integrates advanced silicon technology with innovative packaging to minimize losses and maximize power density in space-constrained designs.