BSC014NE2LSIATMA1

Single FETs, MOSFETs Overview

The BSC014NE2LSI is a monolithic N-channel OptiMOS™ Power-MOSFET rated for a drain-source voltage of 25 V. It features a maximum on-resistance of 1.6 mΩ at VGS=4.5 V and supports continuous drain currents up to 179 A at TC=25°C. The device integrates a Schottky-like body diode with a forward current rating of 74 A. Key dynamic parameters include a total gate charge of 39 nC (VGS=0 to 10 V) and an output charge of 25 nC. Thermal resistance from junction to case is 1.7 K/W, supporting operation within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-performance synchronous buck converter applications
• Monolithic integration of a Schottky-like diode for efficient reverse conduction
• Extremely low on-resistance at logic-level gate voltages
• 100% avalanche tested for enhanced robustness in transient conditions

Single FETs, MOSFETs Applications

• High-efficiency DC-DC buck converters
• Synchronous rectification circuits
• Automotive power distribution systems
• Industrial load switching modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets all relevant JEDEC qualification standards required for the target application environment. Cross-reference the datasheet revision history to validate the accuracy of thermal and electrical ratings before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-voltage, high-current power stages requiring minimal conduction losses. The integrated Schottky-like diode simplifies circuit topology by eliminating external freewheeling diodes. Evaluate the thermal management requirements based on the specified junction-to-case resistance to ensure reliable operation under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ family of power MOSFETs designed for automotive and industrial markets. It utilizes advanced planar technology to achieve superior performance metrics compared to standard silicon devices. The PG-TDSON-8 package provides a compact footprint suitable for space-constrained PCB layouts while maintaining robust thermal dissipation capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameter alignment and thermal characteristics.