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BSC016N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 28A/100A TDSON. Review the specifications below when checking this part for your BOM.
The BSC016N03MSGATMA1 is an N-channel OptiMOS 3 M-Series Power-MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 1.6 mΩ at VGS=10V and 2 mΩ at VGS=4.5V, supporting a continuous drain current of up to 225 A at TC=25°C. The device operates within a junction temperature range of -55°C to +150°C and utilizes the PG-TDSON-8 package.
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with JEDEC standards for target applications before finalizing procurement orders.
Select this component when designing for 5V logic drivers requiring low gate charge and minimal conduction losses. Evaluate thermal resistance requirements based on PCB copper area and ambient operating conditions to ensure safe operation within specified limits.
This part belongs to the OptiMOS 3 M-Series family from Infineon Technologies. It is designed specifically for mobile and portable electronics where space constraints and efficiency are critical. The SuperSO8 package provides superior thermal performance compared to standard surface-mount options.
BSC016N03MS G
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