BSC018NE2LSIATMA1

$1.39

Description：MOSFET N-CH 25V 29A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ecf2606b85d1 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSC018NE2LSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 29A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC018NE2LSIATMA1

Description：MOSFET N-CH 25V 29A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-6
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC018NE2LSIATMA1

BSC018NE2LSIATMA1

Single FETs, MOSFETs Overview

The BSC018NE2LSIATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 25 V drain-source voltage rating and supports a continuous drain current of 100 A. The device exhibits a maximum on-resistance of 1.5 mOhms at 10 V gate drive. It operates within an ambient temperature range of -55 °C to +150 °C and offers a power dissipation capacity of 69 W. The component is housed in a TDSON-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

OptiMOS technology integration for optimized switching performance
High current handling capability with low conduction losses
Enhanced thermal stability across extended operating temperatures

Single FETs, MOSFETs Applications

Low-voltage DC-DC converter circuits
Power management modules requiring high efficiency
Automotive electronic control units

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 to confirm tape-and-reel packaging configuration. Ensure compatibility with TDSON-8 footprint requirements during PCB layout. Cross-reference the latest datasheet revision for any updates to electrical characteristics or recommended soldering profiles before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring robust 25 V operation with substantial current capacity. The low on-resistance minimizes heat generation in high-efficiency applications. Consider the TDSON-8 package size constraints and verify that the thermal management solution aligns with the specified 69 W power dissipation limit under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of silicon-based N-channel MOSFETs designed by Infineon Technologies. These devices are engineered for high-performance power switching applications where efficiency and reliability are critical. The TDSON-8 package provides a compact form factor suitable for space-constrained modern electronic designs.