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BSC019N04LSTATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC019N04LSTATMA1
- Description：MOSFET N-CH 40V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：28A (Ta), 161A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：57 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4060 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：94W (Tc)
- Operating Temperature：-55°C ~ 175°C (TA)
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSC019N04LSTATMA1
Single FETs, MOSFETs Overview
The BSC019N04LST is a single N-channel OptiMOS power MOSFET rated for 40 V drain-source voltage. It features a maximum on-resistance of 1.9 mΩ at VGS=10 V and supports a continuous drain current of 161 A at TC=25 °C. The device operates within a junction temperature range of -55 °C to 175 °C. Key dynamic parameters include a total gate charge of 41 nC (VGS=10 V) and an output charge of 37 nC. It utilizes the PG-TDSON-8 package with four drain pins.
Single FETs, MOSFETs Feature Summary
- Optimized specifically for synchronous rectification applications
- Rated for operation up to 175 °C junction temperature
- Features very low on-resistance for high efficiency
- 100% avalanche tested for robustness
Single FETs, MOSFETs Applications
- Synchronous rectification in DC/DC converters
- Industrial motor control circuits
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the component meets JEDEC qualification standards for industrial applications as stated in the datasheet. Check for any recent revision updates regarding current ratings or thermal characteristics before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when low conduction losses are critical due to its optimized RDS(on). Ensure the application requires logic-level gate drive capability, as indicated by the threshold voltage specifications. Verify that the thermal management design can handle the specified junction-to-case resistance values under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family of power transistors. It is designed for industrial applications requiring high reliability and thermal performance. The device integrates advanced silicon technology to minimize switching losses while maintaining robust avalanche capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists for direct substitutes. Verify pinout compatibility and electrical parameter equivalence if considering alternative packages or manufacturers.
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