BSC019N04NSGATMA1

$1.57

Description：MOSFET N-CH 40V 30A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d6eaec47ad98 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC019N04NSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 30A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC019N04NSGATMA1

Description：MOSFET N-CH 40V 30A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs：108 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8800 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC019N04NSGATMA1

BSC019N04NSGATMA1

Single FETs, MOSFETs Overview

The BSC019N04NSGATMA1 is an N-channel OptiMOS3 power transistor with a 40V drain-source breakdown voltage. It features a maximum on-resistance of 1.9mΩ and supports a continuous drain current of 204A at 25°C case temperature. The device utilizes a PG-TDSON-8 package, providing excellent thermal resistance of 1K/W junction-to-case. It includes a monolithically integrated body diode rated for 100A forward current.

Single FETs, MOSFETs Feature Summary

Optimized technology specifically designed for DC/DC converters and fast-switching SMPS applications
Superior thermal resistance characteristics combined with very low on-resistance
Excellent gate charge to on-resistance figure of merit (FOM)
Qualified according to JEDEC standards for target automotive and industrial applications

Single FETs, MOSFETs Applications

Fast switching MOSFETs in Switch Mode Power Supplies (SMPS)
DC/DC converter circuits
Automotive electronic systems requiring JEDEC qualification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets all RoHS compliance requirements and halogen-free standards as defined by IEC61249-2-21 before final procurement integration.

Single FETs, MOSFETs Selection Notes

Select this component when designing high-efficiency DC/DC converters requiring low conduction losses. The low thermal resistance makes it suitable for compact designs where heat dissipation is critical. Consider the avalanche energy rating if the application involves inductive load switching or potential overvoltage stress scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS3 family from Infineon Technologies, engineered for low-voltage power switching. It represents a generation of silicon MOSFETs optimized for balancing switching speed and conduction efficiency. The PG-TDSON-8 package allows for surface-mount assembly while maintaining robust thermal performance.