BSC019N06NSATMA1

Single FETs, MOSFETs Overview

The BSC019N06NS is a single N-channel OptiMOS power transistor rated for 60 V drain-source voltage. It features a maximum on-state resistance of 1.95 mΩ and supports a continuous drain current of 192 A at 25 °C case temperature. The device utilizes a PG-TDSON-8 FL package with enlarged source interconnection to enhance thermal performance and solder joint reliability. Key dynamic parameters include a total gate charge of 58 nC and an output charge of 63 nC. It operates within a junction temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

• Optimized specifically for synchronous rectification applications
• Features enlarged source interconnection for superior thermal resistance and higher solder joint reliability
• Rated for operation up to 175 °C junction temperature
• Subjected to 100% avalanche testing

Single FETs, MOSFETs Applications

• Synchronous rectification in DC/DC converters
• High-efficiency power supply designs
• Automotive electronics requiring robust thermal performance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required package variant. Confirm that the application environment adheres to the specified absolute maximum ratings, particularly regarding case temperature limits and derating curves. Ensure PCB layout follows the recommended board pad dimensions for the PG-TDSON-8 FL package to achieve the stated thermal characteristics.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its sub-2 mΩ on-resistance. The high current capability makes it suitable for applications demanding significant load handling. Consider the package's thermal advantages if space constraints limit cooling options. Verify compatibility with standard gate drive voltages given the threshold specifications.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family of power transistors, designed for efficiency and reliability. The 'FL' designation indicates the specific package variant with enlarged source pads. It represents a silicon-based enhancement mode device intended for general-purpose switching and power management tasks within the 60 V voltage class.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 60 V rating, TDSON-8 FL package, and comparable RDS(on) and current capabilities. Cross-referencing with other OptiMOS 5 series devices is recommended to ensure pinout and thermal footprint compatibility.