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BSC019N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 28A/237A TSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC019N08NS5ATMA1
- Description：MOSFET N-CH 80V 28A/237A TSON-8
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：28A (Ta), 237A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 146µA
- Gate Charge (Qg) (Max) @ Vgs：117 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8600 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 214W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSON-8-3
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC019N08NS5ATMA1
Single FETs, MOSFETs Overview
The BSC019N08NS5ATMA1 is an N-Channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 5 technology. It features a maximum drain-source voltage of 80 V and a continuous drain current of 247 A at 25°C. The device exhibits a typical on-state resistance of 1.9 mΩ at 10V gate drive. Key electrical parameters include a gate charge of 101 nC and a threshold voltage range of 2.2 V to 3.8 V. It operates within a temperature range of -55°C to +175°C with a power dissipation capacity of 231 W.
Single FETs, MOSFETs Feature Summary
- OptiMOS 5 technology for low on-state resistance
- High thermal stability up to 175°C junction temperature
- Robust gate oxide design for high reliability
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control applications
- Power supply units
Single FETs, MOSFETs Procurement Notes
Verify the specific part number against official Infineon documentation to ensure compatibility with the intended application requirements. Confirm package type and pinout alignment during integration. Check for any recent lifecycle status updates or alternative recommendations directly from the manufacturer before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component based on its 80V rating and low Rds(on) characteristics suitable for high-efficiency power conversion. Consider the HSOF-8 package for surface mount assembly constraints. Evaluate thermal management needs given the 231W power dissipation capability and operating temperature range.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS 5 family of power MOSFETs designed for automotive and industrial applications. It represents a generation of silicon-based transistors optimized for low switching losses and high current handling capabilities in compact packages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
