BSC020N03LSGATMA1

Single FETs, MOSFETs Overview

The BSC020N03LSGATMA1 is an OptiMOS 3 Power-MOSFET featuring a 30 V drain-source voltage and a maximum on-resistance of 2 mΩ. It utilizes a PG-TDSON-8 package to deliver high continuous drain current capabilities up to 176 A at 25°C case temperature. The device is designed for fast switching in switch-mode power supplies, offering excellent gate charge performance and superior thermal resistance. It supports logic-level control and includes avalanche rating specifications for robust operation in DC/DC converter applications.

Single FETs, MOSFETs Feature Summary

• Fast switching MOSFET optimized for SMPS and DC/DC converters
• Excellent gate charge x RDS(on) figure of merit with very low on-resistance
• Superior thermal resistance and avalanche rated capability
• Qualified according to JEDEC standards for target applications

Single FETs, MOSFETs Applications

• Switch-mode power supplies (SMPS)
• DC/DC converters
• Logic level controlled power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code BSC020N03LS G against the required package variant PG-TDSON-8. Confirm that the Pb-free plating and RoHS compliance meet environmental requirements. Ensure the halogen-free status aligns with IEC61249-2-21 standards. Check that the component marking matches the datasheet specification for quality assurance during incoming inspection.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its 2 mΩ maximum RDS(on). Consider the PG-TDSON-8 package for compact designs requiring efficient heat dissipation through the bottom pad. Evaluate the gate charge parameters for driving circuit complexity. Verify that the 30 V breakdown voltage provides sufficient margin for the specific application voltage levels.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS 3 family, which focuses on optimizing the trade-off between on-resistance and gate charge. The BSC020N03LS G variant specifically targets 30 V applications, leveraging advanced trench technology to achieve high current density in a small surface-mount footprint suitable for modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists for direct substitutes. Ensure any alternative maintains compatible pinout, thermal characteristics, and electrical ratings within the 30 V N-channel Power-MOSFET category.