BSC020N03MSGATMA1

Single FETs, MOSFETs Overview

The BSC020N03MSGATMA1 is an N-channel Power-MOSFET from the OptiMOS 3 M-Series, manufactured by Infineon Technologies. It features a PG-TDSON-8 (SuperSO8) package and operates with a drain-source voltage of 30 V. The device supports a continuous drain current of up to 176 A at TC=25°C and VGS=10V, with a maximum on-resistance of 2 mΩ at VGS=10V and 2.5 mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1–2 V, total gate charge of 93 nC at VGS=10V, and a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Optimized for 5V driver applications such as notebooks, VGA circuits, and point-of-load converters.
• Features low figure of merit for switching losses (FOMSW), enabling high-frequency operation in SMPS designs.
• Demonstrates superior thermal resistance characteristics within the SuperSO8 package.
• Subjected to 100% avalanche testing to ensure robustness under transient conditions.

Single FETs, MOSFETs Applications

• Notebook power management systems
• Video graphics array (VGA) power stages
• Point-of-load (POL) DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm that the received parts match the specific ordering code BSC020N03MSGATMA1 and package marking 020N03MS. Ensure compliance with RoHS and halogen-free standards as specified in the datasheet. Validate storage and handling procedures to prevent electrostatic discharge damage prior to assembly.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses at 5V logic levels. The low RDS(on) at VGS=4.5V makes it suitable for direct drive by standard logic controllers without level shifting. Consider the thermal performance and package size if space constraints exist in portable electronics. Evaluate the switching speed requirements against the gate charge specifications to optimize driver design.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS 3 M-Series, a line of power MOSFETs engineered for efficiency in mobile and computing applications. The series focuses on minimizing the product of gate charge and on-resistance to enhance overall system performance. The PG-TDSON-8 package provides a compact footprint with enhanced thermal dissipation capabilities compared to traditional surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for qualified replacements. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Verify that any substitute component meets the same thermal and electrical performance criteria defined in the original datasheet.