BSC022N03S

Single FETs, MOSFETs Overview

The BSC022N03S is an N-channel OptiMOS®2 power transistor designed for fast switching applications. It features a P-TDSON-8 package with a maximum drain-source voltage of 30 V and a typical on-resistance of 1.8 mΩ at 10 V gate drive. The device supports a continuous drain current of 50 A at case temperature of 25 °C and handles pulsed currents up to 200 A. Key electrical characteristics include a gate threshold voltage range of 1.2 V to 2 V, total gate charge of 4.3 nC to 5.8 nC, and avalanche energy capability of 800 mJ.

Single FETs, MOSFETs Feature Summary

• Optimized technology specifically engineered for notebook DC/DC converters
• Avalanche rated with high dv/dt capability for robust operation
• Superior thermal resistance combined with very low on-resistance

Single FETs, MOSFETs Applications

• Notebook DC/DC converters
• Switching mode power supplies (SMPS)
• Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S4218 against official Infineon documentation to ensure correct component revision. Confirm that the P-TDSON-8 package footprint matches your PCB design requirements. Check for any updated datasheet revisions beyond Rev. 1.22 to ensure compliance with current manufacturing specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring logic-level gate drive compatibility and efficient thermal management in compact form factors. The low gate charge facilitates faster switching speeds, reducing dynamic losses. Ensure the operating junction temperature remains within the specified -55 °C to 150 °C range for reliable performance.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS®2 family of power transistors from Infineon Technologies. It utilizes advanced trench gate technology to achieve low on-resistance and fast switching characteristics. The P-TDSON-8 package provides a compact solution suitable for space-constrained portable electronics and power supply designs.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 30 V rating, 50 A current capacity, and P-TDSON-8 package dimensions. Verify that alternative components meet the same JEDEC qualification standards if required for your application.

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy?

The maximum single pulse avalanche energy is 800 mJ when the drain current is 50 A and the gate resistance is 25 Ω.

Is the BSC022N03S suitable for synchronous rectification?

Yes, the datasheet provides specific gate charge parameters for synchronous FETs (Qg(sync)), indicating suitability for such applications.