BSC025N08LS5ATMA1

$2.29

Description：MOSFET N-CH 80V 100A TDSON-8-7
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e5bfdba061d3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC025N08LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 100A TDSON-8-7. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC025N08LS5ATMA1

Description：MOSFET N-CH 80V 100A TDSON-8-7
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7500 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-7
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC025N08LS5ATMA1

BSC025N08LS5ATMA1

Single FETs, MOSFETs Overview

The BSC025N08LS5ATMA1 is an N-channel, logic-level OptiMOS™ 5 power transistor with a drain-source voltage of 80 V. It features a maximum on-state resistance of 2.5 mΩ and supports continuous drain currents up to 187 A at 25 °C case temperature. The device utilizes a PG-TDSON-8 package for surface-mount installation. Key electrical parameters include a gate charge of 44 nC (0V to 4.5V) and an output charge of 88 nC. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for high-performance synchronous rectification in switching mode power supplies.
Features superior thermal resistance characteristics for efficient heat dissipation.
Includes an internal body diode with specified reverse recovery performance.
Fully qualified according to JEDEC standards for industrial applications.

Single FETs, MOSFETs Applications

Synchronous rectification in high-performance switching mode power supplies
Industrial applications requiring robust thermal management
Power conversion systems utilizing low gate drive voltages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details such as reel specifications. Ensure that the component meets all applicable RoHS and REACH compliance requirements relevant to your manufacturing region. Cross-reference the datasheet revision history to confirm the technical data aligns with your design specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses at 80 V with logic-level gate drive compatibility. Consider the thermal resistance values and safe operating area diagrams to ensure adequate cooling solutions are implemented. Evaluate the gate charge and capacitance parameters to optimize driver circuitry for desired switching speeds and efficiency targets.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family from Infineon Technologies, designed for enhanced performance in power electronics. The BSC025N08LS5 variant specifically targets applications needing high current handling capabilities within a compact surface-mount footprint. It represents a generation of silicon MOSFETs optimized for balancing switching speed, conduction loss, and thermal stability.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides or cross-reference tools for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameters and thermal characteristics against the original datasheet specifications.