BSC026N04LSATMA1

Single FETs, MOSFETs Overview

The BSC026N04LSATMA1 is an N-channel OptiMOS Power-MOSFET with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 2.6 mΩ at VGS=10 V and 3.6 mΩ at VGS=4.5 V, supporting a continuous drain current of 119 A at TC=25°C. The device utilizes a PG-TDSON-8 package and includes a monolithic body diode rated for 63 A continuous forward current. Key dynamic parameters include a total gate charge of 32 nC (VGS=10 V) and 22 nC (VGS=4.5 V), with turn-on and fall times of 4 ns each under specified test conditions.

Single FETs, MOSFETs Feature Summary

• Optimized for high-performance synchronous rectification in switching mode power supplies
• Features very low on-resistance at logic-level gate voltages
• Subjected to 100% avalanche testing for enhanced ruggedness
• Provides superior thermal resistance characteristics

Single FETs, MOSFETs Applications

• Synchronous rectification in DC/DC converters
• High-efficiency switching mode power supply designs
• Low-voltage power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure that the PG-TDSON-8 footprint matches the recommended board pad layout provided in the datasheet. Confirm RoHS compliance and halogen-free status requirements align with project standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating is required alongside low conduction losses at 4.5 V drive levels. The TDSON-8 package offers a compact solution for applications where space is limited but thermal performance remains critical. Evaluate the 2.6 mΩ RDS(on) specification against system efficiency targets and verify that the 119 A current rating accommodates peak load demands without exceeding safe operating area limits.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of power MOSFETs manufactured by Infineon Technologies. It is designed specifically for low-voltage applications requiring high efficiency and fast switching speeds. The technology integrates advanced cell design to minimize both conduction and switching losses within a surface-mount compatible package.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools or manufacturer databases for verified substitutes. Do not assume pin-compatible alternatives without confirming electrical parameter alignment and thermal characteristics.