BSC026NE2LS5ATMA1

$1.07

Description：MOSFET N-CH 25V 24A/82A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:31a0074fac08 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC026NE2LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 24A/82A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC026NE2LS5ATMA1

Description：MOSFET N-CH 25V 24A/82A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 29W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-7
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC026NE2LS5ATMA1

BSC026NE2LS5ATMA1

Single FETs, MOSFETs Overview

The BSC026NE2LS5ATMA1 is an N-channel OptiMOS™ 5 Power-MOSFET in a PG-TDSON-8 package. It features a drain-source voltage (VDS) of 25 V and a maximum on-resistance (RDS(on)) of 2.6 mΩ at VGS=4.5 V. The device supports a continuous drain current (ID) of 82 A at TC=25°C with VGS=10 V. Key dynamic parameters include a total gate charge (Qg) of 7.8 nC at VGS=10 V and an output charge (Qoss) of 7.6 nC. Thermal resistance from junction to case (RthJC) is 4.3 K/W, with a maximum operating temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Optimized for high-performance buck converters
Very low on-resistance at VGS=4.5 V
Superior thermal resistance characteristics
100% avalanche tested

Single FETs, MOSFETs Applications

High-performance buck converters
Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Infineon datasheet Rev. 2.1 dated 2020-10-23. Confirm the part marking '26NE2LS5' matches the PG-TDSON-8 package outline. Ensure compliance with RoHS and halogen-free requirements per IEC61249-2-21 before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses at moderate gate drive voltages. The 2.6 mΩ RDS(on) at VGS=4.5 V makes it suitable for efficient power switching where gate drive levels are limited. Verify thermal management capabilities based on the 4.3 K/W junction-to-case resistance.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS™ 5 family of Power-MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is designed as a single N-channel enhancement mode transistor. The product is Pb-free lead plated and complies with environmental directives.