BSC028N06LS3GATMA1

$2.33

Description：MOSFET N-CH 60V 23A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f67a7c3f5e51 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSC028N06LS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 23A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC028N06LS3GATMA1

Description：MOSFET N-CH 60V 23A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs：175 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13000 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC028N06LS3GATMA1

BSC028N06LS3GATMA1

Single FETs, MOSFETs Overview

The BSC028N06LS3G is an N-channel OptiMOS™ 3 power transistor with a 60 V drain-source voltage and a maximum on-resistance of 2.8 mΩ at VGS=10 V. It supports a continuous drain current of 174 A at TC=25 °C and features a total gate charge of 132 nC at VGS=10 V. The device utilizes a PG-TDSON-8 SuperSO8 package, offering a thermal resistance from junction to case of 0.9 K/W.

Single FETs, MOSFETs Feature Summary

Optimized technology specifically designed for DC/DC converters
Excellent figure of merit (FOM) combining low gate charge and on-resistance
Superior thermal resistance characteristics for efficient heat dissipation
Logic level operation suitable for direct drive applications

Single FETs, MOSFETs Applications

High frequency switching circuits
Synchronous rectification
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'G' against official Infineon documentation to confirm RoHS compliance and halogen-free status. Ensure the component matches the PG-TDSON-8 package outline dimensions. Confirm that the part number corresponds to the OptiMOS 3 generation rather than newer iterations.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its optimized RDS(on). Consider the high pulsed drain current capability for handling transient loads. Evaluate the thermal performance based on the specified junction-to-case resistance for your cooling strategy.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of power transistors manufactured by Infineon Technologies. It is designed as a logic-level N-channel MOSFET intended for high-efficiency power conversion applications requiring robust performance in compact surface-mount packages.