BSC028N06NSATMA1

$2.06

Description：MOSFET N-CH 60V 23A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9de94285bc29 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC028N06NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 23A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC028N06NSATMA1

Description：MOSFET N-CH 60V 23A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-7
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC028N06NSATMA1

BSC028N06NSATMA1

Single FETs, MOSFETs Overview

The BSC028N06NSATMA1 is an N-channel OptiMOS™ Power-Transistor rated for 60 V. It features a maximum drain-source on-state resistance of 2.8 mΩ at 10 V gate drive and a continuous drain current of 137 A at 25 °C case temperature. The device operates within a junction temperature range of -55 °C to 175 °C. Key electrical parameters include a total gate charge of 43 nC, input capacitance of 2700 pF, and a thermal resistance from junction to case of 1.5 K/W. It utilizes the PG-TDSON-8 package.

Single FETs, MOSFETs Feature Summary

Optimized for high-performance synchronous rectification in switch-mode power supplies
Fully qualified according to JEDEC standards for industrial applications
Features superior thermal resistance with bottom-side cooling capability
Includes internal body diode and is 100% avalanche tested

Single FETs, MOSFETs Applications

Synchronous rectification in switch-mode power supplies
Server power solutions
Telecom infrastructure power systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure that the component meets all required environmental standards, including RoHS compliance and halogen-free requirements as defined by IEC61249-2-21. Cross-reference the datasheet revision date to validate the most current technical specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and high current handling in compact surface-mount layouts. The 175 °C operating rating supports robust thermal management in dense power electronics. Evaluate the thermal resistance values relative to the PCB copper area to ensure adequate heat dissipation for the intended duty cycle and ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS™ family of 60 V N-channel power transistors. It is designed to replace older generation MOSFETs in server and telecom power architectures where efficiency and power density are critical. The PG-TDSON-8 package provides a balance between thermal performance and footprint size compared to traditional leaded packages.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference tools for verified substitutes. Ensure any replacement maintains compatibility with the PG-TDSON-8 footprint and matches or exceeds the 2.8 mΩ Rds(on) and 60 V breakdown voltage ratings.