BSC029N025S G

Single FETs, MOSFETs Overview

The BSC029N025S G is an OptiMOS®2 N-channel power transistor designed for high-efficiency switching applications. It features a PG-TDSON-8 package with a maximum drain-source voltage of 25 V and a continuous drain current of 100 A at 25 °C case temperature. The device exhibits a low on-resistance (R DS(on)) of 2.9 mΩ max at V GS=10 V, optimized gate charge characteristics, and superior thermal resistance. It supports avalanche and dv/dt ratings, making it suitable for demanding power conversion environments.

Single FETs, MOSFETs Feature Summary

• Optimized technology specifically engineered for notebook DC/DC converters
• Logic level N-channel configuration with excellent gate charge x R DS(on) figure of merit
• Avalanche rated capability for robust operation under inductive load conditions
• Superior thermal resistance combined with very low on-resistance for efficient heat dissipation

Single FETs, MOSFETs Applications

• Switching Mode Power Supplies (SMPS)
• Notebook DC/DC converters
• Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code '29N025S' against the datasheet specifications. Confirm the package type matches PG-TDSON-8 and ensure compliance with RoHS directives and Pb-free lead plating requirements. Cross-reference the revision number Rev 1.2 when reviewing technical documentation to maintain accuracy during integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low voltage drop and high current handling within compact footprints. Consider the thermal resistance values relative to the PCB cooling area and ambient conditions. Evaluate the gate charge parameters against driver capabilities to optimize switching speed and minimize losses in synchronous rectification or high-frequency topologies.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS®2 family, representing a generation of power transistors focused on balancing switching speed and conduction losses. It utilizes advanced silicon technology to achieve low on-resistance while maintaining reliability in consumer electronics and portable computing power stages.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting with other N-channel MOSFETs in the same voltage class.