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BSC029N025SG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC029N025SG
- Description：N-CHANNEL POWER MOSFET
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5090 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 78W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC029N025SG
Single FETs, MOSFETs Overview
The BSC029N025SG is an N-channel Power MOSFET manufactured by Infineon Technologies. It utilizes OptiMOS technology and is housed in a TDSON-8 (PowerTDFN8) package. The device features a drain-source voltage rating of 25V and a continuous drain current capacity of 100A at 25°C. Key electrical parameters include a maximum on-state resistance of 2.9mΩ at a gate-source voltage of 10V, with a typical gate charge of 7nC at 10V. The component operates within a junction temperature range of -55°C to 175°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology integration for optimized power efficiency
- High current handling capability suitable for low-voltage applications
- Robust thermal performance via compact surface-mount packaging
Single FETs, MOSFETs Applications
- Low-side switching in DC-DC converters
- Load switching in automotive electronics
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'G' against official Infineon documentation to confirm compliance status and exact marking details. Ensure the procurement channel provides valid traceability records. Cross-reference the part number with the latest datasheet revision to confirm pinout compatibility and parameter consistency before finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high current density in a small footprint. Evaluate the thermal resistance characteristics relative to the PCB copper area to ensure adequate heat dissipation. Confirm that the gate drive voltage aligns with the specified threshold and on-resistance conditions for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family of power transistors. These devices are engineered for general-purpose power switching applications. The TDSON-8 package offers a balance between thermal performance and board space efficiency, making it suitable for dense electronic assemblies.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume functional equivalence with other manufacturers without verifying pinout, voltage ratings, and thermal specifications.
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