BSC030N03LSGATMA1

Single FETs, MOSFETs Overview

The BSC030N03LSGATMA1 is an N-channel enhancement-mode Power-MOSFET from the OptiMOS 3 series, manufactured by Infineon Technologies. It features a PG-TDSON-8 (SuperSO8) surface-mount package with eight pins. Key electrical parameters include a drain-source voltage (VDS) of 30 V and a maximum on-resistance (RDS(on)) of 3 mΩ at VGS=4.5 V. The device supports a continuous drain current (ID) of 122 A at TC=25°C and a pulsed drain current of 488 A. Gate threshold voltage ranges from 1 V to 2.2 V. Total gate charge (Qg) is typically 20 nC at VGS=4.5 V and 55 nC at VGS=10 V. Thermal resistance junction-to-case (bottom) is 1.8 K/W, with a power dissipation rating of 69 W at TC=25°C.

Single FETs, MOSFETs Feature Summary

• Optimized technology for DC/DC converters and fast switching in SMPS applications
• Logic-level gate drive capability with low gate threshold voltage
• Avalanche rated for robustness against transient energy events
• Superior thermal resistance and excellent figure-of-merit (gate charge x RDS(on))

Single FETs, MOSFETs Applications

• Switching Mode Power Supplies (SMPS)
• DC/DC Converters
• Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering code matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet. Cross-reference the marking code '030N03LS' on the package body to validate the part number before integration into production lines.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and high efficiency in 30 V systems. The logic-level gate drive simplifies driver circuit design compared to standard threshold devices. Consider the thermal performance and package size when evaluating PCB layout constraints. Verify that the application's peak current demands remain within the pulsed drain current limits defined in the absolute maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS 3 family, designed for general-purpose power switching. It utilizes silicon technology and is housed in a lead-free, halogen-free PG-TDSON-8 package. The device is intended for use in environments operating between -55°C and +150°C. It represents a balance of low on-resistance and fast switching speeds suitable for modern compact power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include BSC030N03MS G and BSC030N03LD G, though parameter variations such as RDS(on) and Qg may exist. Always verify pinout compatibility and thermal characteristics before substitution.