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BSC030N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 21A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC030N03MSGATMA1
- Description：MOSFET N-CH 30V 21A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：73 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5700 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC030N03MSGATMA1
Single FETs, MOSFETs Overview
The BSC030N03MSGATMA1 is an N-channel OptiMOS 3 M-Series Power-MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 3 mΩ at VGS=10 V and 3.8 mΩ at VGS=4.5 V, supporting a continuous drain current of 122 A at TC=25°C. The device operates within a temperature range of -55°C to +150°C and includes 100% avalanche testing.
Single FETs, MOSFETs Feature Summary
- Optimized for 5V driver applications such as notebooks, VGA circuits, and point-of-load converters
- Low figure of merit for switching (FOMSW) designed for high-frequency switch-mode power supplies
- Superior thermal resistance characteristics in the PG-TDSON-8 package
Single FETs, MOSFETs Applications
- Notebook power management systems
- Video graphics array (VGA) circuits
- Point-of-load (POL) converter designs
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking the manufacturer's marking code '030N03MS' against official datasheet specifications. Confirm the package type matches the PG-TDSON-8 outline dimensions. Ensure compliance with RoHS and halogen-free requirements per IEC61249-2-21 standards before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when low gate charge combined with minimal on-resistance is required for high-efficiency switching applications. The specific optimization for 5V drivers makes it suitable for logic-level control scenarios where standard MOSFETs may exhibit higher conduction losses or slower switching speeds.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS 3 M-Series, engineered specifically for mobile and portable electronics. It utilizes silicon technology to deliver enhanced performance in compact surface-mount packages, addressing the demand for efficient power conversion in space-constrained consumer devices.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists for direct equivalents. Verify that any substitute maintains identical pinout configurations and meets the same electrical ratings for voltage, current, and thermal resistance.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
