BSC030N10NS5SCATMA1

Single FETs, MOSFETs Overview

The BSC030N10NS5SC is an OptiMOS™ 5 N-channel power transistor rated for 100 V drain-source voltage. It features a maximum on-resistance of 3.0 mΩ and supports a continuous drain current of 171 A at 25 °C. The device utilizes a PG-VSON-8 or PG-WSON-8 package with dual-side cooling capabilities, providing a thermal resistance from junction to bottom case of 0.5 °C/W. Total gate charge is specified at 70 nTypical.

Single FETs, MOSFETs Feature Summary

• Dual-side cooled package architecture designed to minimize thermal resistance between the junction and the top surface.
• OptiMOS™ 5 technology delivers very low on-resistance combined with superior thermal performance characteristics.
• Qualified for industrial applications in accordance with JEDEC JESD47, JESD22, and J-STD-020 standards.

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Power supply designs requiring high efficiency
• Automotive electronics applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (PG-VSON-8 or PG-WSON-8) required for your design, as both are supported under this part number. Confirm that the PCB layout accommodates the dual-side cooling requirements by ensuring adequate copper area for the drain connection. Ensure compliance with RoHS and halogen-free specifications if mandated by your project constraints.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses and efficient heat dissipation are critical. The dual-side cooling feature allows for reduced heatsinking requirements compared to standard single-sided packages. Evaluate the thermal resistance values against your system's ambient temperature and power dissipation limits to ensure reliable operation within the 175 °C maximum junction temperature rating.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS™ 5 family, which focuses on optimizing the trade-off between switching speed and conduction losses. The PG-VSON-8/PG-WSON-8 package represents an advanced form factor designed for high-power density applications where thermal management is a primary constraint.

Single FETs, MOSFETs Replacement Considerations

BSC030N10NS5

Single FETs, MOSFETs FAQ

What is the thermal resistance from junction to the top case?

The thermal resistance from junction to the top case is typically 0.72 °C/W, supporting the dual-side cooling capability of the package.

Is the device tested for avalanche energy?

Yes, the datasheet specifies that the device is 100% avalanche tested, with a single pulse avalanche energy rating of 398 mJ at a drain current of 50 A.