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BSC031N06NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 100A TDSON-8-1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC031N06NS3GATMA1
- Description：MOSFET N-CH 60V 100A TDSON-8-1
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11000 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC031N06NS3GATMA1
Single FETs, MOSFETs Overview
The BSC031N06NS3GATMA1 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 3 product family. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package with eight pins. The device features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) rating of 100 A at 25°C. Its maximum on-state resistance (Rds(on)) is specified at 3.1 mΩ. The gate-source voltage limits are defined between -20 V and +20 V, with a typical threshold voltage of 4 V. Total gate charge (Qg) is 130 nC. The component supports an operating temperature range from -55°C to +150°C and has a power dissipation rating of 2.5 W.
Single FETs, MOSFETs Feature Summary
- Optimized low on-resistance for high-efficiency power switching applications
- Integrated body diode for synchronous rectification or freewheeling operations
- Enhanced thermal performance through direct die attachment to the exposed pad
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the exact part number suffix against official manufacturer documentation to confirm the specific tape-and-reel packaging configuration. Ensure that the procurement channel provides valid traceability records. Confirm RoHS compliance status directly with the supplier prior to ordering. Validate that the received components match the datasheet specifications regarding pinout and marking codes.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V rating and high current capacity are required in a compact TDSON-8 footprint. Consider the 3.1 mΩ on-resistance for conduction loss calculations. Evaluate the thermal resistance characteristics relative to the PCB copper area available for heat dissipation. Compare gate charge requirements against the driving capability of the intended controller IC.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 3 series, which represents a generation of trench MOSFETs designed for improved efficiency compared to previous technologies. The TDSON-8 package offers a balance between electrical performance and board space utilization. It serves as a standard solution for medium-voltage power management tasks where moderate switching speeds are sufficient.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for verified substitutes. Cross-reference parameters such as Rds(on), Id, and package dimensions before implementation.
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