BSC032N03SG

Single FETs, MOSFETs Overview

The BSC032N03S G is an OptiMOS®2 N-channel power MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 100 A at 25 °C case temperature. The maximum on-resistance is 3.2 mΩ at VGS=10 V and 4.9 mΩ at VGS=4.5 V. Key dynamic parameters include a total gate charge of 39 nC, input capacitance of 3820 pF, and reverse transfer capacitance of 173 pF. Thermal resistance from junction to case is 1.6 K/W.

Single FETs, MOSFETs Feature Summary

• Optimized for notebook DC/DC converters with fast switching capabilities suitable for SMPS applications
• Features avalanche rated performance and dv/dt rating for robust operation under transient conditions
• Logic level design ensures efficient drive characteristics with excellent gate charge versus on-resistance product

Single FETs, MOSFETs Applications

• Notebook DC/DC converters
• Switching mode power supplies (SMPS)
• Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code '32N03S' against the datasheet specifications. Confirm the package type matches PG-TDSON-8 and ensure the device meets RoHS compliance requirements. Cross-reference the manufacturer part number BSC032N03S G with official Infineon documentation to validate technical parameters before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current applications requiring compact packaging. The logic level gate threshold supports direct drive from standard control interfaces. Evaluate thermal management needs based on the specified junction-to-case resistance and safe operating area curves for the intended duty cycle and ambient conditions.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS®2 family of power transistors designed for efficiency and reliability. It utilizes silicon technology to achieve superior thermal resistance and low on-state losses compared to previous generations. The component is Pb-free and compliant with environmental directives, targeting portable electronics and power delivery systems.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools or contact the manufacturer for verified substitute part numbers. Ensure any replacement maintains compatibility with the PG-TDSON-8 footprint and meets or exceeds the original electrical ratings.