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BSC032NE2LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 22A/84A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC032NE2LSATMA1
- Description：MOSFET N-CH 25V 22A/84A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 78W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC032NE2LSATMA1
Single FETs, MOSFETs Overview
The BSC032NE2LS is a single N-channel OptiMOS Power-MOSFET with a 25 V drain-source breakdown voltage. It features a maximum on-resistance of 3.2 mΩ at VGS=4.5 V and supports an 84 A continuous drain current at TC=25°C. The device utilizes a PG-TDSON-8 SuperSO8 package, providing a thermal resistance from junction to case of 3.4 K/W. Key dynamic parameters include a total gate charge of 16 nC (0V to 10V) and an output charge of 9.4 nC.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converter applications
- Features very low on-resistance at logic-level gate drive voltages
- Includes superior thermal resistance characteristics
- Subjected to 100% avalanche testing
Single FETs, MOSFETs Applications
- High-performance synchronous buck converters
- DC-DC power supply modules
- Low-voltage load switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct component selection. Confirm that the required package variant matches the PG-TDSON-8 specification. Ensure compliance with RoHS and halogen-free standards as defined in the product datasheet before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when designing low-voltage power stages requiring high efficiency and compact footprint. Evaluate the thermal management requirements based on the specified junction-to-case resistance. Consider the logic-level gate threshold for compatibility with standard microcontroller or driver outputs in synchronous rectification topologies.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family of power MOSFETs, specifically engineered for 25 V applications. It represents a silicon-based enhancement mode device designed to balance conduction losses with switching performance. The technology focuses on reducing on-state resistance while maintaining robust thermal handling capabilities within small surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists for verified substitutes. Cross-reference pinouts and electrical ratings carefully if considering alternative manufacturers.
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