BSC033N08NS5SCATMA1

Single FETs, MOSFETs Overview

The BSC033N08NS5SCATMA1 is an OptiMOS™ 5 N-channel power transistor rated for 80 V drain-source voltage. It features a maximum on-state resistance of 3.3 mΩ at 10 V gate drive and supports a continuous drain current of 144 A at 25 °C. The device utilizes a PG-VSON-8 or PG-WSON-8 dual-side cooled package, providing a junction-to-case bottom thermal resistance of 1.1 K/W. Total gate charge is typically 66 nC, with a switching charge of 19 nC. It operates within a temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

• Dual-side cooled package architecture enabling superior thermal dissipation through both top and bottom surfaces.
• Optimized specifically for synchronous rectification applications in server and desktop environments.
• 100% avalanche tested to ensure robustness against transient energy events.

Single FETs, MOSFETs Applications

• Synchronous rectification in server power supplies
• Desktop computer power conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (PG-VSON-8 or PG-WSON-8) required for your PCB layout, as dimensions differ slightly between the two options. Confirm that the marking code '033N08SC' matches your incoming inspection standards. Ensure the ordering suffix ATMA1 aligns with your reel specifications. Cross-reference the latest datasheet revision 2.2 for any updates to thermal characteristics or electrical limits before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low thermal resistance is critical for high-current synchronous rectification. The 80 V rating suits 48 V bus architectures. Evaluate the 3.3 mΩ RDS(on) against system efficiency targets. Consider the dual-side cooling requirement during PCB design to fully utilize the 1.1 K/W thermal performance. Verify compatibility with standard gate drive voltages of 10 V.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ 5 family, designed for high-efficiency power conversion. It replaces older generations by offering improved thermal management via its dual-side cooled package. The technology focuses on reducing conduction losses while maintaining robust avalanche capability for demanding industrial and computing applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. When replacing similar parts, verify that the new component matches the 80 V rating, 3.3 mΩ max RDS(on), and compatible PG-VSON-8/PG-WSON-8 footprint dimensions.