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BSC034N06NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC034N06NSATMA1
- Description：MOSFET N-CH 60V 100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.3V @ 41µA
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 74W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC034N06NSATMA1
Single FETs, MOSFETs Overview
The BSC034N06NSATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 3.4 mΩ at VGS=10 V and ID=50 A, supporting a continuous drain current of 112 A at TC=25 °C. The device utilizes a PG-TDSON-8 package and includes a total gate charge of 33 nC. It operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switch-mode power supplies.
- Features superior thermal resistance with a junction-to-case bottom value of 1.0 K/W typical.
- Subjected to 100% avalanche testing to ensure robustness under transient conditions.
Single FETs, MOSFETs Applications
- Synchronous rectification in DC/DC converters
- High-efficiency switch-mode power supply designs
- General low-voltage power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure that the component's absolute maximum ratings are not exceeded during operation. Confirm compliance with RoHS and halogen-free requirements relevant to the target application environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a low RDS(on) and high current capability are required in a compact surface-mount form factor. The PG-TDSON-8 package offers improved thermal performance compared to standard SO-8 packages. Consider the gate charge characteristics for driving requirements in high-frequency switching applications.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS family of power transistors from Infineon Technologies. It is designed to provide enhanced efficiency and reliability in power conversion circuits. The technology focuses on minimizing conduction losses while maintaining robust switching performance.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based solely on matching electrical parameters without verifying package pinouts and thermal characteristics.
Single FETs, MOSFETs FAQ
What is the maximum pulsed drain current rating?
The maximum pulsed drain current (ID,pulse) is rated at 448 A at a case temperature of 25 °C.
Is the device qualified for automotive applications?
The datasheet states the device is qualified according to JEDEC standards for target applications, but use in automotive systems requires express written approval from Infineon Technologies.
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