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BSC035N04LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 21A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC035N04LSGATMA1
- Description：MOSFET N-CH 40V 21A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC035N04LSGATMA1
Single FETs, MOSFETs Overview
The BSC035N04LSGATMA1 is an N-channel OptiMOS™ 3 power transistor with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 3.5 mΩ at VGS=10 V and supports a continuous drain current of 112 A at TC=25 °C. The device utilizes a PG-TDSON-8 package, providing a thermal resistance from junction to case bottom of 1.8 K/W. Total gate charge is typically 64 nC at VGS=10 V.
Single FETs, MOSFETs Feature Summary
- Optimized technology for DC/DC converters and fast switching in SMPS applications
- Superior thermal resistance with low junction-to-case bottom thermal impedance
- Logic level operation suitable for direct drive by standard logic signals
- Qualified according to JEDEC standards for target industrial applications
Single FETs, MOSFETs Applications
- Switching Mode Power Supplies (SMPS)
- DC/DC Converters
- General purpose power switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'ATMA1' against the manufacturer's official documentation to confirm tape and reel packaging specifications. Ensure the component matches the Rev 2.0 datasheet parameters. Confirm RoHS compliance and halogen-free status as stated in the final data sheet before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses and high current handling within a compact surface-mount footprint. Evaluate the thermal performance based on the PCB copper area and ambient conditions. Consider the gate charge requirements for driver selection to ensure efficient switching transitions.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS™ 3 family, designed for low-voltage power switching. It is housed in a PG-TDSON-8 package, which offers enhanced thermal dissipation compared to standard SO-8 packages. The series targets efficiency improvements in power conversion circuits.
Single FETs, MOSFETs Replacement Considerations
Consult the official cross-reference tools or datasheets for compatible parts with matching voltage, current, and RDS(on) ratings. Verify pinout compatibility and thermal characteristics when substituting.
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