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BSC035N10NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC035N10NS5ATMA1
- Description：MOSFET N-CH 100V 100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6500 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC035N10NS5ATMA1
Single FETs, MOSFETs Overview
The BSC035N10NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 100 V. It features a maximum on-state resistance of 3.5 mΩ and supports continuous drain currents up to 155 A at 25 °C case temperature. The device includes an internal body diode and has a total gate charge of 70 nC. It operates within a junction temperature range of -55 °C to 150 °C and utilizes a PG-TDSON-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switching mode power supplies
- Features superior thermal resistance through optimized bottom-side heat dissipation
- Includes an internal body diode with specified reverse recovery characteristics
- Subjected to 100% avalanche testing for enhanced reliability
Single FETs, MOSFETs Applications
- Synchronous rectification in high-performance switching mode power supplies
- Power conversion circuits requiring low conduction losses
- Applications utilizing the integrated body diode for freewheeling current paths
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm packaging details. Ensure that the component meets all JEDEC qualification standards required for the target application environment. Confirm compliance with RoHS directives and halogen-free requirements before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and low RDS(on) are required for efficient power management. Consider the PG-TDSON-8 package dimensions for PCB layout constraints. Evaluate the thermal resistance values relative to the expected operating conditions and available cooling area on the printed circuit board.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family, which integrates planar and trench MOSFET technologies. The series targets applications demanding high efficiency and robust performance. The BSC035N10NS5 variant specifically balances low on-resistance with manageable gate charge for effective switching control.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based solely on matching electrical parameters such as voltage or current ratings without verifying pinout and thermal characteristics.
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