Single FETs, MOSFETs BSC0403NSATMA1 product image

BSC0403NSATMA1

$2.97
  • Description:150V, N-CH MOSFET, LOGIC LEVEL,
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c4bfe6d70d08 Category: Brand:

  
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BSC0403NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is 150V, N-CH MOSFET, LOGIC LEVEL,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC0403NSATMA1

  • Description:150V, N-CH MOSFET, LOGIC LEVEL,
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V, 10V
  • Rds On (Max) @ Id, Vgs:11mOhm @ 35A, 10
  • Vgs(th) (Max) @ Id:4.6V @ 91µA
  • Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 75 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-7
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC0403NSATMA1

BSC0403NSATMA1

Single FETs, MOSFETs Overview

The BSC0403NS is an OptiMOS™5 N-channel power transistor with a 150 V drain-source voltage rating. It features a maximum on-state resistance of 11 mΩ at VGS=10V and supports a continuous drain current of 70 A at TC=25°C. The device operates within a junction temperature range of -55 °C to 150 °C and dissipates up to 125 W. Key electrical parameters include a gate charge of 28 nC, reverse recovery charge of 50 nC, and thermal resistance from junction to case of 1 °C/W.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-performance synchronous rectification in switch-mode power supplies
  • 100% avalanche tested for enhanced ruggedness
  • Superior thermal resistance characteristics
  • Low reverse recovery charge (Qrr)

Single FETs, MOSFETs Applications

  • Synchronous rectification in SMPS
  • Power delivery systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the datasheet to ensure correct package and marking. Confirm compliance with RoHS and halogen-free standards as stated in the product description. Check JEDEC qualification status for intended industrial applications. Ensure thermal management design aligns with the specified RthJC values.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds at 150 V. Consider the 11 mΩ RDS(on) for efficiency optimization. Evaluate thermal constraints based on the 1 °C/W junction-to-case resistance. Verify that the 70 A current rating meets peak load requirements under appropriate cooling conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™5 family, designed for low-voltage power applications. It utilizes advanced trench technology to achieve high performance in a compact PG-TDSON-8 package. The series targets efficient power conversion in modern electronic devices.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 280 A at TA=25°C.

Is the device suitable for synchronous rectification?

Yes, the datasheet explicitly states it is optimized for high-performance SMPS, such as synchronous rectification.

BSC0403NSATMA1BSC0403NSATMA1
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