SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BSC0403NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is 150V, N-CH MOSFET, LOGIC LEVEL,. Review the specifications below when checking this part for your BOM.
The BSC0403NS is an OptiMOS™5 N-channel power transistor with a 150 V drain-source voltage rating. It features a maximum on-state resistance of 11 mΩ at VGS=10V and supports a continuous drain current of 70 A at TC=25°C. The device operates within a junction temperature range of -55 °C to 150 °C and dissipates up to 125 W. Key electrical parameters include a gate charge of 28 nC, reverse recovery charge of 50 nC, and thermal resistance from junction to case of 1 °C/W.
Verify the specific ordering code against the datasheet to ensure correct package and marking. Confirm compliance with RoHS and halogen-free standards as stated in the product description. Check JEDEC qualification status for intended industrial applications. Ensure thermal management design aligns with the specified RthJC values.
Select this component for applications requiring low conduction losses and fast switching speeds at 150 V. Consider the 11 mΩ RDS(on) for efficiency optimization. Evaluate thermal constraints based on the 1 °C/W junction-to-case resistance. Verify that the 70 A current rating meets peak load requirements under appropriate cooling conditions.
This part belongs to Infineon's OptiMOS™5 family, designed for low-voltage power applications. It utilizes advanced trench technology to achieve high performance in a compact PG-TDSON-8 package. The series targets efficient power conversion in modern electronic devices.
The maximum pulsed drain current is 280 A at TA=25°C.
Yes, the datasheet explicitly states it is optimized for high-performance SMPS, such as synchronous rectification.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.