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BSC042N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 20A/93A TDSON. Review the specifications below when checking this part for your BOM.
The BSC042N03LSGATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 family. It features a 30 V drain-source voltage rating and a maximum continuous drain current of 100 A at 25°C. The device offers a typical on-resistance of 4.7 mΩ at 10 V gate drive. Packaged in a surface-mount TDSON-8 configuration, it supports operation within a temperature range of -55°C to +150°C.
Verify the complete part number including suffixes against official Infineon documentation to ensure correct package and tape/reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to ordering. Ensure design compatibility with specified thermal and electrical limits.
Select this component for applications requiring low conduction losses in the 30 V voltage range. The TDSON-8 package suits space-constrained designs needing robust thermal handling. Evaluate gate charge requirements against driver capabilities to optimize switching speeds. Consider avalanche energy ratings if inductive load switching is anticipated.
This part belongs to the OptiMOS 3 series, designed for general-purpose power switching. It utilizes trench technology to minimize resistance while maintaining reliability. The series targets cost-sensitive consumer and industrial electronics where efficiency and thermal management are critical.
Consult official cross-reference data for verified substitutes. Ensure replacement parts match voltage, current, and package constraints.
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