Single FETs, MOSFETs BSC046N10NS3GATMA1 product image

BSC046N10NS3GATMA1

$2.29
  • Description:MOSFET N-CH 100V 17A/100A TDSON
  • Series:OptiMOS™ 3
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:4a1789978b54 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BSC046N10NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 17A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC046N10NS3GATMA1

  • Description:MOSFET N-CH 100V 17A/100A TDSON
  • Series:OptiMOS™ 3
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):156W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-7
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC046N10NS3GATMA1

BSC046N10NS3GATMA1

Single FETs, MOSFETs Overview

The BSC046N10NS3GATMA1 is an N-channel OptiMOS 3 power transistor in a PG-TDSON-8 package. It features a drain-source voltage of 100 V, continuous drain current of 100 A at 25°C, and maximum on-resistance of 4.6 mΩ at VGS=10V. Total gate charge is 63 nC. Operating temperature ranges from -55°C to +150°C with power dissipation up to 156 W.

Single FETs, MOSFETs Feature Summary

  • Optimized for DC-DC conversion applications
  • Very low gate charge for high frequency operation
  • Excellent gate charge x RDS(on) figure of merit
  • Halogen-free and RoHS compliant construction

Single FETs, MOSFETs Applications

  • DC-DC converters
  • High frequency switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact part number BSC046N10NS3GATMA1. Confirm the manufacturer is Infineon Technologies. Ensure the package type is PG-TDSON-8. Check that the marking reads 046N10NS. Validate compliance with RoHS and halogen-free standards as specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance and fast switching speed are required for DC-DC conversion. The device supports high continuous current and operates up to 150°C junction temperature. Consider the thermal resistance and package size for heat dissipation requirements in the target application design.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of power transistors by Infineon Technologies. It utilizes silicon technology and is designed for robust performance in power electronics. The product is qualified according to JEDEC standards and offers lead-free plating for environmental compliance.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

BSC046N10NS3GATMA1BSC046N10NS3GATMA1
$2.29
Buy Now