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BSC047N08NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 18A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC047N08NS3GATMA1
- Description：MOSFET N-CH 80V 18A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：69 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4800 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC047N08NS3GATMA1
Single FETs, MOSFETs Overview
The BSC047N08NS3GATMA1 is an N-channel Power MOSFET from Infineon’s OptiMOS 3 series, housed in a PG-TDSON-8 surface-mount package. It features a drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 100 A at case temperature, with a typical on-resistance (Rds(on)) of 2.5 mΩ. The device supports gate-source voltages up to ±20 V and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a gate charge (Qg) of 52 nC at 10 V and a power dissipation rating of 125 W at case temperature.
Single FETs, MOSFETs Feature Summary
- Utilizes Infineon’s proprietary OptiMOS 3 technology for optimized switching performance and low conduction losses.
- Designed for high-current applications with a robust 100 A continuous drain current capability.
- Features a compact PG-TDSON-8 surface-mount package suitable for automated assembly and space-constrained designs.
Single FETs, MOSFETs Applications
- Motor control systems
- Power supply circuits
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the required thermal management solutions align with the specified 125 W power dissipation rating at case temperature. Ensure compatibility with standard PG-TDSON-8 footprints during PCB layout.
Single FETs, MOSFETs Selection Notes
Select this component when an 80 V N-channel MOSFET with high current handling is required. Compare Rds(on) and gate charge values against alternative OptiMOS 3 devices to balance conduction and switching losses. Verify that the operating voltage and current demands remain within the absolute maximum ratings defined in the official datasheet.
Single FETs, MOSFETs Part Context
This device belongs to the OptiMOS 3 family, which represents Infineon’s third-generation silicon MOSFET technology. These components are engineered to provide superior efficiency compared to previous generations, offering lower on-resistance and improved switching characteristics for modern power electronics.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes within the same package and specification range include BSC042NE7NS3G and BSC057N08NS3G. Verify pinout compatibility and thermal resistance parameters before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
