BSC0500NSIATMA1

$0.70

Description：MOSFET N-CH 30V 35A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f210eaaf2b68 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC0500NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 35A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC0500NSIATMA1

Description：MOSFET N-CH 30V 35A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：35A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3300 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-6
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC0500NSIATMA1

BSC0500NSIATMA1

Single FETs, MOSFETs Overview

The BSC0500NSIATMA1 is an OptiMOS™ 5 N-channel power MOSFET with a 30 V drain-source voltage rating. It features a maximum on-resistance of 1.3 mΩ at VGS=4.5 V and supports a continuous drain current of up to 186 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and is qualified according to JEDEC standards. Key dynamic parameters include a total gate charge of 18 nC (VGS=0 to 4.5 V) and 39 nC (VGS=0 to 10 V). It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Optimized for high-performance buck converters
Monolithically integrated Schottky-like diode
Very low on-resistance at logic-level gate drive voltages
100% avalanche tested

Single FETs, MOSFETs Applications

High-performance buck converters
DC-DC conversion circuits
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Infineon datasheet Rev. 2.1, dated July 2020. Confirm that the ordering code matches BSC0500NSI and the tape-and-reel suffix ATMA1. Ensure compliance with RoHS and halogen-free requirements as specified in the documentation before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses at logic-level gate drives. The 30 V rating and 186 A current capability suit high-current DC-DC designs. Verify thermal constraints using the provided RthJC and RthJA values to ensure operation remains within the specified -55°C to 150°C junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS™ 5 family, designed for efficient power switching. It utilizes trench technology to achieve low on-resistance in a PG-TDSON-8 package. The series targets automotive and industrial applications where reliability and performance are critical.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the OptiMOS™ 5 family sharing the same package and electrical ratings. Ensure any replacement maintains compatibility with the required gate drive voltage levels and thermal dissipation characteristics.