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BSC0501NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 29A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0501NSIATMA1
- Description：MOSFET N-CH 30V 29A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：29A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0501NSIATMA1
Single FETs, MOSFETs Overview
The BSC0501NSIATMA1 is an N-channel OptiMOS™ 5 power MOSFET with a 30 V drain-source breakdown voltage. It features a PG-TDSON-8 package and supports a continuous drain current of up to 130 A at TC=25°C. The maximum on-resistance RDS(on) is 1.9 mΩ at VGS=4.5 V. Key dynamic parameters include a total gate charge Qg of 11.4 nC (VGS=0 to 4.5 V) and 24 nC (VGS=0 to 10 V). The device operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converter applications
- Features a monolithically integrated Schottky-like diode
- Guaranteed 100% avalanche testing
Single FETs, MOSFETs Applications
- High-performance buck converters
- Target applications qualified according to JEDEC standards
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses and fast switching speeds in 30 V systems. The PG-TDSON-8 package provides efficient thermal dissipation suitable for compact layouts. Consider the integrated Schottky-like diode characteristics when designing synchronous rectification or freewheeling paths.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS™ 5 family, representing advanced silicon technology from Infineon Technologies. It is designed to deliver superior performance metrics compared to previous generations, specifically targeting efficiency improvements in DC-DC conversion architectures.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameter alignment and thermal characteristics.
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